GENERAL DESCRIPTION

The RN78241S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES

RDS(ON)3GS=10V

RDS(ON)4.2GS=4.5V

Super high density cell design for extremely low RDS(ON)

Exceptional on-resistance and maximum DC current capability 

Halogen free

MSL1

APPLICATIONS

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch