GENERAL DESCRIPTION

The RN78241S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES

RDS(ON)≤3  @VGS=10V

RDS(ON)≤4.2 @VGS=4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance andmaximum DC current capability

● Halogen free

● MSL1

APPLICATIONS

● Portable Equipment

● Battery Powered System

● DC/DC Converter

● Load Switch